氮化镓 (GaN) 可为便携式产品提供更小、更轻、更高效的桌面 AC-DC 电源。 氮化镓（GaN）是一种宽带隙半导体材料。
| 型号 | 产品图 | 最大漏极电压 | 最大漏极电流 | 导通内阻 | 封装 | 栅极总电荷 | 反向恢复电荷 | PDF下载 |
| HG65C1R035G |  |
650V | 35mΩ | TO-247 | 42nC | 142nC |  |
|
| HG65C1R070F |  |
650V | 32A | 70mΩ | TO-220 | 14nC | 124nC | |
| HG65C1R070G |  |
650V | 32A | 70mΩ | TO-247 | 13nC | 140nC | |
| HG65C1R070N |  |
650V | 24A | 70mΩ | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R120N | |
650V | 17A | 120mΩ | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R200C |  |
650V | 200mΩ | TO-220 | 9.5nC | 110nC | |
|
| HG65C1R200L |  |
650V | 12A | 167mΩ | TO-252 | 9.5nC | 110nC | |
| HG65C1R200N |  |
650V | 12A | 200mΩ | DFN8*8 | 9.5nC | 110nC | |
| HG70C1R460L |  |
700V | 5A | 460mΩ | TO-252 | 9.5nC | 110nC | |
| HGN65C1R120F |  |
650V | 22A | 120mΩ | TO-220 | 9.5nC | 110nC | |
